General Description
Planar technology is used to create the devices, which have a "base island" arrangement and a monolithic Darlington configuration. The transistors that result have an outstanding high gain performance and a very low saturation voltage.
Features
■ The low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General-purpose linear and switching
CAD Models
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Footprint
3D Model
Specification
Technical
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Operating Temperature－150°
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Part Status－Active
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Moisture Sensitivity Level (MSL)－1 (Unlimited)
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Voltage - Rated DC－100V
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Max Power Dissipation－65W
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Current Rating－5A
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Power Dissipation－2W
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Transistor Application－SWITCHING
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Collector-Emitter Voltage (VCEO)－100V
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Max Collector Current－5A
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Current - Collector Cutoff (Max)－500μA
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Collector-Emitter Breakdown Voltage－100V
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Collector-Emitter Saturation Voltage－4V
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Collector Base Voltage (VCBO)－100V
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Emitter Base Voltage (VEBO)－5V
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Max Junction Temperature (Tj)－150°C
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