Power and switching devices made on GaN Semiconductor operate noticeably better than silicon-based devices thanks to their enhanced properties, which include faster switching speed, higher breakdown strength, superior thermal conductivity, and lower on-resistance. GaN crystals can be grown on a variety of substrates, including silicon (Si), silicon carbide (SiC), and sapphire. Utilizing the current infrastructure for silicon manufacture, employing big diameter silicon wafers that are easily accessible, and developing a GaN epilayer on top of silicon can all reduce costs.
GaN Semiconductor is regarded as essential parts utilised in the construction of 5G base stations. To enable seamless integration into the current network infrastructures, 5G base stations must be very tiny in size. GaN on Silicon Carbide substrates has emerged as the best option for addressing the technical specifications of a 5G base station. This is due to a variety of factors, including excellent thermal conductivity, low levels of crystal defect density, and increased resilience to temperature variations.
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