Resistive Random Access Memory (ReRAMs) were being developed by a number of firms in the early 2000s, and several of them submitted patent applications claiming various implementations of the technology. ReRAM has begun commercialisation on a small-scale, KB-capacity basis. Rambus paid $35 million in February 2012 for Unity Semiconductor, a ReRAM firm. In May 2012, Panasonic released a ReRAM assessment kit based on the 1T1R (1 transistor – 1 resistor) tantalum oxide memory cell design.
Although Resistive Random Access Memory (RRAM) was initially envisioned as a flash memory replacement, the cost and performance advantages have not been enough to convince corporations to make the switch. ReRAM appears to be compatible with a wide range of materials. However, the discovery that the widely used high-gate dielectric HfO2 may be employed as a low-voltage ReRAM has prompted researchers to look for other options. Sharp Corporation, a Japanese electronic component maker, has registered RRAM as a trademark in a number of countries, including members of the European Union.
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