GaN stands for gallium nitride, a mechanically stable wide band gap semiconductor with a high hardness. GaN is used to make semiconductor power devices, radio frequency (RF) components, and light-emitting displays, among other things (LEDs). In power conversion, RF (radio frequency), and analogue applications, GaN Semiconductor has demonstrated its capacity to replace the other old sluggish silicon (Si) technology.Gallium nitride (GaN) is a mechanically stable wide bandgap semiconductor with a high hardness. GaN-based power devices outperform silicon-based devices with better breakdown strength, faster switching speed, higher thermal conductivity, and lower on-resistance.
GaN semiconductor devices are becoming increasingly popular in the defence and aerospace industries, as they improve data transmission and execution reliability in armed forces, communications, and radars. GaN Semiconductor are also frequently employed in radars to help with collision avoidance policies, efficient navigation, and real-time air traffic surveillance. These chips are also commonly utilised in military jammers and land-based radios.
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