Industry Analysis
· The GaN power device market is expected to witness market growth at a rate of 49.95% in the forecast period of 2021 to 2028. Data Bridge Market Research report on GaN power device market provides analysis and insights regarding the various factors expected to be prevalent throughout the forecast period while providing their impacts on the market’s growth.
· The wide-ranging Data Bridge market report covers an array of aspects of the market analysis which today’s businesses call for. This market document also defines a chapter on the global market and allied companies with their profiles, which provides important data pertaining to their insights in terms of finances, product portfolios, investment plans, and marketing and business strategies. This market research report is generated with a nice blend of industry insight, talent solutions, practical solutions and use of technology to advance user experience. An outstanding Data Bridge market report puts light on many aspects related to Semiconductors and Electronics industry and market.
Market Insights and Scope
Ø Gallium nitride (GaN) transistors have progressed as an improved performance alternative of silicon-based transistors, due to their capacity of constructing more dense devices for an assumed resistance value and breakdown voltage in comparison to the silicon devices.
Ø Additionally, the credible GaN Power Device Market report helps the manufacturer in finding out the effectiveness of the existing channels of distribution, advertising programs, or media, selling methods and the best way of distributing the goods to the eventual consumers. Taking up such market research report is all the time beneficial for any company whether it is a small scale or large scale, for marketing of products or services. It makes effortless for Semiconductors and Electronics industry to visualize what is already available in the market, what market anticipates, the competitive environment, and what should be done to surpass the competitor.
Industry Segmentation
The GaN power device market is segmented on the basis of device type, voltage range, application, vertical, technology, wafer material and wafer size. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets.
- On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. GaN power discrete devices is further sub segmented into GaN power non-RF devices and GaN power RF devices. GaN power ICs is further sub segmented into MMIC and hybrid.
- On the basis of voltage range, the GaN power device market is segmented into <200 volt, 200–600 volt, >600 volt),
- On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter is further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging. Radio frequency is further sub segmented into radio frequency front-end module, repeater/booster/das and radar and satellite.
- On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
- On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
- On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
- On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.
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Market Country Level Analysis
The countries covered in the GaN power device market report are the
ü U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).
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Industry Share Analysis
The major players covered in the GaN power device market report are
ü Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, among other domestic and global players. Market share data is available for global, North America, Europe, Asia-Pacific (APAC), Middle East and Africa (MEA) and South America separately.
ü An influential GaN Power Device Market research report displays an absolute outline of the market that considers various aspects such as product definition, customary vendor landscape, and market segmentation. Currently, businesses are relying on the diverse segments covered in the market research report to a great extent which gives them better insights to drive the business on the right track. The competitive analysis brings into light a clear insight about the market share analysis and actions of the key industry players. With this info, businesses can successfully make decisions about business strategies to accomplish maximum return on investment (ROI).
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