The Global 3D Ferroelectric Memory Devices market size is forecast to reach $7.3 billion by 2026, growing at a CAGR of 18.3% from 2021 to 2026. Compared to flash storage like static random access memory (SRAM) or dynamic random access memory (DRAM), ferroelectric memory devices offer faster write-erase cycles, providing greater data reliability with low power consumption benefits. Technological advances such as rise of AI, IoT and others across data centres along with increasing adoption of portable and implanted medical devices can be considered some of the major drivers boosting the market growth of 3D ferroelectric memory devices. Increasing demand towards high bandwidth as well as energy efficient memory devices for serving enterprise storage applications along with rise of smart and wireless consumer electronic products will propel the need for next-generation memory devices like 3D ferroelectric memory devices in the long run. Moreover, high investment towards self-driving automotives, shift towards improved performance networking components within telecom industry as well as increasing adoption of non-volatile memory devices across application areas including wearable, smart meters and so on are further analyzed to create a positive impact on the market growth of 3D ferroelectric memory devices in the coming time.
3D Ferroelectric Memory Devices Market Segment Analysis- By Type
FeRAM/FRAM segment is analyzed to grow with the highest CAGR of 5.7% in the global 3D Ferroelectric Memory Devices market during the forecast period 2021-2026. Factors such as growing demand for memory devices capable of handling bulks of data with high-speed read and write functionality have been aiding its market growth across varied application areas. Advances towards exploiting both ferroelectric and magnetic properties towards designing four-state memory devices have been playing a vital role in the FRAM market growth, due to combination with magnetic random access memory. In comparison to other non-volatile memory devices, Ferroelectric Random Access Memory (FeRAM) acts as an ideal solution for delivering data rewriting along with reduced power consumption, which is one of the prime concerns for meeting faster as well as energy efficient storage applications across various end use industries. With capabilities like data storage within shorter time intervals and low power conditions, FeRAM have been getting wider adoption over static and dynamic random access memory majorly across consumer electronic applications including mobile phones, personal digital assistants, and smart cards with others. In addition, due to the surge of wireless devices overtime, the need for low power consuming and faster data processing storage random access memory becomes highly essential, thus creating a positive impact on the growth of FeRAM in the 3D ferroelectric memory device markets. Moreover, the advent of new ferroelectric materials like hafnium oxide (HfO2) have also emerged as a better choice for high quality as well as scalable ferroelectric capacitors to be incorporated within FeRAM, thereby impacting its higher demands for various end users, including automotive applications. In July 2020, Fujitsu Semiconductor Memory Solution Ltd. had introduced a FRAM product with the largest density available through the launch of a 4Mbit FRAM named, MB85RS4MTY. This development was meant to guarantee about 10 trillion read or write cycle times with low active currents under the high-temperature environment conditions of 125?, making it suitable for applications like industrial robots as well as advanced driver-assistance systems. Such developments from some of the prominent market players is further set to boost the market growth for these FRAMs in the long run.
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3D Ferroelectric Memory Devices Market Segment Analysis- By End Users
Automotive sector is analyzed to account for the highest CAGR of around 6.4% in the global 3D Ferroelectric Memory Devices market during 2021-2026. Designing embedded systems with stringent non-volatile memory requirements for supporting functionalities such as faster data write & access speeds, data retention and low power, majorly for automotive applications can be considered as a prime factor impacting the growth for 3D ferroelectric memory devices. As EEPROM (electrically erasable programmable read-only memory) requires more time for data memory writing, eventually slowing down the write performance contributing towards loss of sensor data during power failure during a vehicular accident, adoption of 3D ferroelectric memory devices have been gaining wide popularity for eliminating such hazards and improving automotive safety. Additionally, automotive sector is considered as one of the most stringent industries focusing towards deployment of high reliability semiconductor products, for governing safety critical features of vehicles, over a wide temperature range with a targeted zero failure rate, thereby impacting the need for varied 3D ferroelectric memory devices be it FeFET, FeRAM and so on. Increasing penetration of ADAS systems will automatically drive the need for components such as cameras, radar sensors, LiDAR and so on, capable of providing faster memory optimization under low power or power shutdown conditions. With the rapid shift towards investments on autonomous vehicles, the need for high reliability event data recorders within ADAS systems capable of ensuring better capture with energy efficiency is set to boost the growth towards 3D ferroelectric memory devices in the long run. In February 2019, Bosch had revealed about its plans of investing upto €4 billion (around USD 4.7 billion) towards the development of automated driving technology as well as mobility solutions by the year 2022. This investment plan was a part of company’s goal of providing accident-free mobility through driver assistance systems as well as Level 4 and Level 5 driverless operation, which is further analyzed to create a positive impact on the market growth of 3D ferroelectric memory devices in the long run.
3D Ferroelectric Memory Devices Market Segment Analysis- Geography
APAC region is anticipated to witness significant growth in the global 3D ferroelectric memory devices market with the highest CAGR of around 8.3% during the forecast period 2021-2026. Factors such as adoption of advanced technologies like IoT, artificial intelligence and others across various industries as well as growing shift towards energy efficient devices have been attributing towards the market growth of next-generation non-volatile memory devices like 3D ferroelectric memory devices across the region. High penetration of smart as well as wireless consumer electronics including smartphones, laptops and others along with investments towards automated driving or self-driving cars will be contributing towards the need for memory devices capable of offering benefits like faster data speed, energy-efficiency, power backup and so on, thereby impacting the market growth of 3D ferroelectric memory devices in the coming years. Increasing demands for enterprise data storage due to rising industrialization, rise of data center facilities across Asian countries like India, Japan and many others along with rising adoption of portable or implanted medical devices across healthcare sector is further set to propel the demand for 3D ferroelectric memory devices during the forecast period. In May 2021, Edge Centers, an Australian data center firm had revealed about its expansion plans through establishment of two data center facilities in Japan by the end of the year. Establishment of these off-grid data centers will help in supporting digital transformation services within the country, thus analyzed to drive the demand towards high endurance ferroelectric memory devices for serving high-speed low power data center application areas in the long run.
3D Ferroelectric Memory Devices Market Drivers
Technological advances such as rise of AI, IoT and others across data centres:
Technological advances such as rise of AI, IoT and others across data centres can be considered as one of the major drivers for the market growth of 3D ferroelectric memory devices. With technological advances as well as rise of artificial intelligence, IoT, big data, edge computing and so on, the need for non-volatile storage memory devices have been significantly rising within data centers owing to requirements of processing as well as storing bulk amounts of information. This attributes towards the need for high functioning data centers capable of offering high speed scalable and low power consumption devices across data centers, thus impacting the growth towards 3D ferroelectric memory devices. Deployment of ferroelectric memory have already gained wide popularity for serving high speed server applications in data centers owing to various advantages including faster speed data transfers at minimal power consumption. Since storage plays a crucial role across data center power consumption applications, opting for networking equipment, servers, routers, with many others leveraging ferroelectric memory technology can prove beneficial in optimizing work operations at low costs. With rise of advanced technologies like AI, IoT, 5G and so on, the demand towards next-generation memory data center solutions, capable of faster accessing, programming or erase speeds with ultra-low energy needs have been also growing, affecting the demand for 3D ferroelectric memory devices. In November 2020, Ferroelectric Memory GmbH (FMC) had revealed about its completion of $20 million Series B funding from investors including imec, SK Hynix, Robert Bosch Venture Capital with many others. According to the company, this funding will help in speeding up commercialization of their FeFET (ferroelectric field-effect transistor) as well as FeCAP technology for serving AI, IoT, embedded memory as well as high-performance stand-alone data centers. Such factors are further set to drive the market forward for 3D ferroelectric memory devices across advanced and energy efficient data centers in the long run.
Increasing adoption of portable and implantable medical devices drives the market forward:
Increasing adoption of portable and implantable medical devices is analyzed to be one of the major drivers in the market growth of 3D ferroelectric memory devices. Adoption of 3D ferroelectric memory devices have been witnessing significant growth overtime owing to its capability of serving mission-critical data-logging applications such as life-enhancing patient monitoring devices. With the surge of health conditions such as heart attacks, Parkinson’s disease and so on, the need for new generation of medical devices capable of replacing, supporting as well as monitoring damaged or weak structures within the human body with lesser power consumption becomes essential. Portable or implantable medical devices such as cardiac pacemakers, neuromodulators, defibrillators, glucose monitors with many others drive the need for recording large amounts of patient data continuously while offering over-the-air diagnostics. In order to meet such requirements, there is a shift towards medical devices combining advantages like extended battery life, high reliability, energy efficiency, and so on, which in turn is creating a positive impact for the growth of 3D ferroelectric memory devices market. Compared to EEPROM and NOR flash memory, ferroelectric memory storage with lower power consumption, data retention as well as insensitivity towards radiation have emerged as an ideal solution for various portable or implanted medical devices, in order to support functionality upto ten or more years. In October 2020, Medtronic Private Limited announced about the launch of an advanced pacemaker, named Azure with BlueSync technology, as a part of addition to its cardiac rhythm & heart failure portfolio. Development of this pacemaker was done to offer automatic and secure wireless communication via Bluetooth Low Energy, alongside remote monitoring through smartphones or tablets, with improved longevity upto 13.7 years. Such developments towards introducing advanced medical device with higher functioning longevity will further boost the need for 3D ferroelectric memory devices incorporated with required properties in the long run.
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3D Ferroelectric Memory Devices Market Challenges
High Costs & Design Complexity:
High costs associated with designing, integration or fabrication can be considered as one of the major factors restraining the market growth of 3D ferroelectric memory devices. In comparison to other flash devices, ferroelectric memory devices offer lower storage densities with storage capacity limitations at times, affecting its wider adoptability in end-use markets. Since designing or integration processes related to nanoscale fabrication involves complexity with usage of expensive nanomaterial, which help in scaling down challenges faced in traditional semiconductor industries, alongside raising production costs for the semiconductor manufacturers. Incorporating features including low power consumption, improved scalability, radiation resistance and many others eventually increasing designing challenges for the chip manufacturers, thus increasing higher production time and skilled expertise in order to avoid operation issues in the long run. Moreover, lesser compatibility with CMOS technology along with use of certain ferroelectric materials like PZT creates fatigue degradation problems as well as lead pollution to the environment, adversely affecting its market growth. In addition, the contaminated process of manufacturing these memory devices incurs high capital costs for reducing adverse environmental impact while making it suitable for small scale storage applications, thus hampering the market growth of 3D ferroelectric memory devices.
3D Ferroelectric Memory Devices Market Landscape
Product launches, partnerships and R&D activities are key strategies adopted by players in the 3D Ferroelectric Memory Devices market. 3D Ferroelectric Memory Devices top 10 companies include Cypress Semiconductor Corporation, Fujitsu Ltd., Lapis Semiconductor Co. Ltd., Symetrix Corporation, Texas Instruments Incorporated, STMicroelectronics, SK hynix Inc., Samsung Electronics Co., Ltd., Toshiba Corporation and Infineon Technologies AG among others.
Acquisitions/Technology Launches/Partnerships
In January 2021, researchers from POHANG UNIVERSITY OF SCIENCE & TECHNOLOGY (POSTECH), demonstrated a new technique to fabricate ferroelectric memory by hafnia-based ferroelectrics and oxide semiconductors. By that process memory performance were achieved higher than conventional flash memory and perovskite ferroelectric memories
In July 2019, Cypress Semiconductor Corporation announced about the launch of ExcelonTM ferroelectric random access memory, as a part of its addition to serial non-volatile memories. Development of this FeRAM was meant to offer high-speed non-volatile data logging features, capable of preventing data loss within automotive as well as industrial environments having extreme temperature environments.
Key Takeaways
Increasing adoption of portable and implanted medical devices as well as technological advances such as rise of AI, IoT with many others across data centres is analyzed to significantly drive the 3D Ferroelectric Memory Devices market during the forecast period 2021-2026.
FeRAM/FRAM market is anticipated to grow with the highest CAGR during the forecast period 2021-2026, attributing to various factors including faster data storage, low power consumption and many others.
APAC is analyzed to account for the fastest growing region during 2021-2026, due to increasing shift towards energy-efficiency devices, investments towards autonomous or self-driving vehicles as well as growing penetration of smart and wireless consumer products like smartphones, laptops and so on.
Related Reports:
A. Ferroelectric RAM Market
https://www.industryarc.com/Report/15613/ferroelectric-ram-market.html
B. Non-Volatile Memory Market Analysis
https://www.industryarc.com/Report/15344/non-volatile-memory-market.html
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