High Electron Mobility Transistor Market - Forecast (2022 - 2027)

The Global market for High electron mobility transistor is forecast to reach $2.8 billion by 2026, growing at a CAGR of 15.2% from 2021 to 2026. The market growth is attributed to the factors such as rapid industrialisation, technological developments, and growing demand from consumer electronics, automobiles industries and others. One of the first selections for these components is the GaN HEMTs. Active electronic sensor arrays are constructed from GaN-based HEMTs, used for airborne radars, ground-based air defense radars, and naval radar. In a standard DBS receiver, discrete HEMTs are almost often used as the preamplifier, accompanied by one or more GaAs MESFET monolithic microwave integrated circuits (MMICs) including heterostructure FET (Field Effect Transistors) and modulation-doped FET due to their excellent low-noise characteristics.

 

 

The report: “High electron mobility transistor market – Forecast (2021-2026)”, by IndustryARC covers an in-depth analysis of the following segments of the high electron mobility transistor market.

By Type: GaN, GaN/SiC, GaAs, Others.

By Voltage Type: High voltage grade, Low voltage grade.

By Sales Channel: Direct, Indirect.

By Application: Energy & Power, Consumer Electronics, Automobiles, Inverter & UPS, Industrial, Broadband communication, Radar components and space, Sensor applications, DNA detection, Protein detection, and others.

By Geography: North America (U.S, Canada, Mexico), Europe (Germany, UK, France, Italy, Spain, Russia and Rest of Europe), APAC (China, Japan India, South Korea, Australia and Rest of Asia-Pacific), South America (Brazil, Argentina and Rest of South America),and ROW (Middle East and Africa).

 

 

High Gain, high Switching Speed, higher efficiency, Small source resistance, High gain-bandwidth, and others add up to its features for various application and boosts the market growth.

North America dominate the global high electron mobility transistor market in the forecast period 2021-2026 owing to technological developments, growth of consumer electronics, automobile and other industries.

 

 

 

High electron mobility transistor market is segmented into GaN, GaN/SiC, GaAs and others. The GaN type segment held the highest market share in 2020 at 45.2%. Moreover, it is anticipated to witness significant market growth during the forecast period 2020-2025. The most exhilarating HEMT devices are material based on Gallium Nitride (GaN), which provides high quality, high power density and outstanding wideband output compared to current technologies such as Silicon (SI) or Gallium Arsenide (GaAs). Owing to its outstanding electron transport and electrical properties, GaN is also desirable for a large range of electronics applications. Due to the excellent performance in high power and millimeter wave frequency applications, the AlGaN / GaN HEMTs have gained a major part of the focus among numerous GaN-based electronic devices. GaN has been a very promising substrate for high-temperature, high-power and high-frequency transistors because of the electronic properties such as strong critical breakdown area, high density electron velocity, reasonable thermal conductivity and low cost. This is also chemically very unreactive (very hard to chisel), as the N-face content is chemically more active than the Ga-face material.

 

 

Radar components and space type segment held the highest market share of high electron mobility transistor in 2020. Moreover, it is anticipated to witness significant market growth at 13.9% CAGR during the forecast period 2021-2026. The main features for making radar components are high gain and low noise amplifiers. Using the low-noise HEMT preamplifier has resulted in major device efficiency enhancements at small incremental expense. A low-noise down-converter consisting of 0.25 ppm HEMT and three GaAs MMIC chips displayed a device noise value of less than 1.3 dB with a gain of around 62 dB from 11.7 GHz to 12.2 GHz, which is remarkable for a commercial machine. Microwave technology used for space applications is very costly, because it needs special protection from extreme space conditions to live. In addition, satellites must be deployed, meaning that machinery be sustained at high vibration and shocks without injury. To withstand these environments, HEMTs may be manufactured and have been widely used in different fields.

 

 

North America held the highest market growth of high electron mobility transistor in the year 2020 at 37%. Moreover, it is anticipated to witness the highest market growth during the forecast period 2021-2026. The market growth is attributed to its applications in verticals including consumer electronics, aerospace, automobiles, and others. The growth of these vertical drives the market growth in this region. Moreover, owing to technological advancements, presence of key manufacturers in this region also tends to boost the market growth.

 

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The growing demand of consumer electronics and the applicability of high electron mobility transistor tends to drive the market growth. High electron mobility transistors produce high gain, making these transistors very useful as amplifiers. They can quickly switch speeds. And finally, very low noise values are produced as the current variations in these transistors are relatively low.

 

 

The Automotive sector is increasingly utilizing HEMT solutions. A hybrid vehicle (HV) and electric vehicle (EV) systems use many power switching devices. Higher performances than Si power device, for instance, low on-resistance, high speed, high operating temperature, are highly required for future development of the HV / EV. GaN power devices are gaining significant attention for applications. Small signal amplifiers, power amplifiers, oscillators and mixers working at frequencies up to 60 GHz and more are commonly used in low-noise signal amplifiers owing to their noise efficiency. In reality, HEMT devices are used for a broad variety of RF architecture applications. Consequently these features along with its applications leverages a positive impact on the market growth.

 

 

 

The reliability of GAN HEMTs and the millimetre of microwave integrated circuits are still a relevant issue for the market penetration of these devices. The role of temperature in fostering GAN HEMT loss is uncertain, and the amplification of deterioration factors is generally unknown.

 

 

Partnerships and acquisitions along with product launches are the key strategies adopted by the players in the high electron mobility transistor market. As of 2019, the market for high electron mobility transistor market is consolidated with the top players including Fujitsu, Mitsubishi Electric, Ampleon, Qorvo, Oki Electric, Lake Shore Cryotronics, Cree, TOSHIBA, Microsemi and among others.

 

 

In June 2021, STMicroelectronics recently announced a new family of GaN parts designated STi2GaN, which stands for ST Intelligent and Integrated GaN. The parts use ST’s bond-wire-free packaging technology to provide robustness and reliability.The new product family aims to leverage the high-power density and efficiency of GaN to offer a range of 100- and 650-V high-electron-mobility transistor (HEMT) devices.

In January 2019, researchers at Urbana-Champaign at the University of Illinois advanced gallium nitride on silicon transistor technology by optimizing the composition of the layers of semiconductors that make up the unit. Working with industry collaborators Veeco and IBM, the team developed a high mobility electron transistor system on a 200 mm silicon substratum with a method scalable to broader typical wafer sizes in the market.