Sophisticated HEXFET Power MOSFETs from International Rectifier employs innovative processing processes to achieve extremely low on-resistance per silicon area. This characteristic, along with the fast switching speed and ruggedized device architecture of HEXFET power MOSFETs, provides the designer with an extremely efficient and dependable device that can be employed in a wide range of applications. The D2Pak is a surface mount power package that can accommodate a die as large as HEX-4. It boasts the highest power capability and the lowest on-resistance of any contemporary surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount installation.
Features
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Advanced Process Technology
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Ultra-Low On-Resistance
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
The devices are used in Switching Power Supplies, Motor Controllers, Automotive, LED Drivers.
CAD Model
Symbol
Footprint
3D Model
Specification
Technical
Operating Temperature－-55°C~175°C TJ
Series－HEXFET®
Part Status－Discontinued
Moisture Sensitivity Level (MSL)－1 (Unlimited)
Technology －MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)－260
Power Dissipation-Max－200W Tc
Operating Mode－ENHANCEMENT MODE
Construction
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